Silicon photomultipliers (SiPMs) have become the technology of choice for light detection, in applications from medical imaging to rare event searches and collider physics. SiPM’s behavior and nuisance parameters depend strongly on operating conditions, including the applied voltage and temperature. SiPM’s also produce external cross-talk photons which can have a significant impact on detector performance. Lastly, their photo-detection efficiency (PDE) depends strongly on the photon’s wavelength, angle of incidence and operational voltage. Thus to fully understand detector response, including the impact of external cross-talk, SiPM PDE must be understood over a large parameter space.

This talk will give a brief overview of SiPMs and the R&D efforts at TRIUMF. The talk will then focus on our novel model for SiPM PDE, which has been successfully applied to UV sensitive Hamamatsu and FBK devices. This model aims to benefit all detectors using SiPMs where detailed detector response is required.

Zoom link: https://washington.zoom.us/j/4109322791?pwd=bE1OSHI3SWtLRGNoTXJSaVk1V2hNdz09